EDN

Toshiba Makes Major Advances in NAND Flash Memory with 3-bit-per-cell 32nm generation and with 4-bit-per-cell

Toshiba Makes Major Advances in NAND Flash Memory with 3-bit-per-cell 32nm generation and with 4-bit-per-cell 43nm technology TOKYO— Toshiba Corporation (TOKYO: 6502) today announced breakthroughs in ...
Semiconductor Engineering

Reinventing Embedded Memory: Solving The SRAM Scaling Wall

RAAAM is a deep-tech startup spun out of Bar-Ilan University through the Cadence University Incubator Program. They’ve ...
Morning Overview on MSN

Nanoengineered spintronic memory stores data in 4 resistance states

A magnetic tunnel junction engineered to produce four distinct resistance states instead of the standard two could double the ...
Morning Overview on MSN

Monash researchers capture atomic motion that writes data in next-gen memory

A team at Monash University has recorded, for the first time, the atom-by-atom rearrangements that occur when data is written ...
NextBigFuture

Analog in-memory Computing Attention Mechanism for Fast and Energy-efficient Large Language Models

A Nature paper describes an innovative analog in-memory computing (IMC) architecture tailored for the attention mechanism in large language models (LLMs). They want to drastically reduce latency and ...
EDN

DRAM basics and its quest for thermal stability by optimizing peripheral transistors

For decades, compute architectures have relied on dynamic random-access memory (DRAM) as their main memory, providing temporary storage from which processing units retrieve data and program code. The ...