Negative capacitance field-effect transistors (NCFETs) represent a transformative approach in the design of low-power electronic devices. By integrating ferroelectric materials into the gate structure ...
Researchers from Lawrence Berkeley National Laboratory developed an open-source 3D simulation framework capable of modeling the atomistic origins of negative capacitance in ferroelectric thin films at ...
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Ferroelectric Helps Break Transistor Limits
Integrating an electronic material that exhibits a strange property called negative capacitance can help high-power gallium nitride transistors break through a performance barrier, say scientists in ...
A new technical paper titled “Insights Into Design Optimization of Negative Capacitance Complementary-FET (CFET)” was published by researchers at National Yang Ming Chiao Tung University. “This work ...
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