A new semiconductor manufacturing process is said to make possible ICs with submicron geometry that can withstand as much as 30 V. Dubbed industrial CMOS (iCMOS) by its creators at Analog Devices Inc.

Gallium nitride is starting to make broader inroads in the lower-end of the high-voltage, wide-bandgap power FET market, where silicon carbide has been the technology of choice. This shift is driven ...

Gallium nitride (GaN) is winning over the world of power electronics with its faster switching speeds and higher efficiency over that of silicon MOSFETs, which have dominated for decades. But nothing ...

Challenges when dealing with high-power-density designs. Utilizing cloud manufacturing platforms (CMPs). Power packaging using additive manufacturing. Today’s designers are now more equipped to ...

At PCIM Europe 2024, power electronics manufacturers will unveil their latest innovations and advances in power ICs and technologies. These include improvements in silicon power devices as well as ...

The rapid acceleration of the power devices used in electric vehicles (EVs) is challenging chipmakers to adequately screen the ICs that power these vehicles.[1] While progress toward autonomous ...