Vishay Intertechnology, Inc. released a new series of 600 V and 650 V n-channel power MOSFETs with ultra-low maximum on-resistance from 64 mOhm to 190 mOhm at 10 V and with a wide range of current ...
Diamond CMOS needs symmetrical doping control like we have for semiconductor silicon and diamond n-MOS is needed. The n-channel diamond MOSFETs are demonstrated. This work will enable the development ...
With their low on-resistance, Nexperia’s 12-V and 30-V N-channel trench MOSFETs minimize energy losses and increase efficiency. The 30-V PMCB60XN and PMCB60XNE come in ultra-compact wafer-level ...
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