Download this article in PDF format. The RF PIN diode as we know it today was invented by J. Nishizawa in 1950. Now, almost 70 years later, a new PIN diode concept—shielded-anode PIN diode (SAPIN)—has ...
A reconfigurable device that can be a p-n diode, a MosFET or a BJT has been made by researchers at SUNY-Polytechnic Institute in Albany, New York. “We can form a single device that can perform the ...
For many recent generation power semiconductors, package innovation makes a significant contribution to key performance parameters. In the case of HV MOSFETs, high-speed hard-switching transitions are ...
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