Abstract: Dual active bridges (DABs) may lose zero voltage switching (ZVS) operation when the junction capacitance of semiconductors cannot be fully charged or discharged within dead time. The ...

Abstract: This paper describes the characteristics of PN junction for semiconductor materials like Si, Ge, GaAs, InP. Several PN junction characteristics such as the current voltage, capacitance ...

ABSTRACT: After three-dimensional modeling, we expressed the diffusion capacity of p-layer charges through the transition zone as a function of the impurity concentration in the p-layer, the ...

ABSTRACT: After three-dimensional modeling, we expressed the diffusion capacity of p-layer charges through the transition zone as a function of the impurity concentration in the p-layer, the ...

A recent study published in Light: Science & Applications introduced a new method for determining the PN junction depth in a silicon wafer. This technique works at nanometer-scale resolution and is ...

A new terahertz technique reveals nanometer-scale PN junction depths in silicon chips, enabling faster, non-contact inspection for advanced semiconductor manufacturing. (Nanowerk News) Silicon ...

Si LSI manufacturing technology is essential as the foundation of modern society. However, there was no wafer-scale technology for rapid, non-destructive, and non-contact evaluation of the internal ...

Inductor-inductor-capacitor (LLC) resonant converters have a couple of appealing characteristics for applications requiring an isolated DC/DC converter such as minimal switching losses, no reverse ...

Researchers in China have investigated the impact of phosphorus diffusion gettering on industrial silicon heterojunction solar cell and have found that, with an optimized gas flow, higher efficiencies ...

Increasing the reverse bias voltage, VJ, across a PN junction leads to the redistribution of charge away from the interface, leaving a depleted region or layer, W, in Figure 1. This depleted layer ...